From ComputerWorld: Samsung Electronics has begun mass production of 256-gigabit 3D vertical NAND (V-NAND) flash memories, clearing the way for higher-capacity memory that doesn't take up more room.
The memory is built on 48 layers of three-bit multi-level-cell (MLC) arrays and offers 32 gigabytes of data storage on a single chip. It doubles the density of conventional 128Gb NAND flash chips and consumes at least 30% less power than the previous Samsung chip, the company said Tuesday.
Smaller than a fingertip, Samsung's third generation V-NAND flash memory follows the second-generation chip, which featured three bits per cell and 32 vertically stacked cell layers.
In contrast to planar NAND, Samsung's V-NAND incorporates a 3D Charge Trap Flash (CTF) structure of 48 stacked array layers, like a miniature skyscraper. The arrays are connected electrically through 1.8 billion holes punched through them. Each chip has more than 85.3 billion cells, each storing three bits of data.
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