Grandis: STT-RAM to replace DRAM, flash

From EETimes: Grandis Inc.--a developer of spin transfer torque random access memory (STT-RAM) technology--has updated its product roadmap with some ambitious efforts in mind: It hopes to replace DRAM, and eventually, NAND, with its next-generation MRAM.

But the company’s roadmap has been altered to some degree, according to an analyst, who believes that it takes longer than expected to bring a new memory technology to market.

Intellectual-property (IP) and device house Grandis has been developing STT-RAM, which is said to combine the cost benefits of DRAM, the fast read and write performance of SRAM, and the non-volatility of flash. STT-RAM is also said to solve the key drawbacks of first-generation, field-switched MRAM.

In a recent interview at its headquarters, Farhad Tabrizi, president and CEO of Grandis, was not shy about the company’s ambitions. ''We are focusing on the commercialization of STT-RAM,’’ he said.

''STT-RAM has a huge potential market as a universal, scalable memory,’’ Tabrizi said. ''It can replace embedded SRAM and flash at 45-nm, DRAM at 32-nm, and ultimately replace NAND.’’

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