Globalfoundries Enters Joint-Development Agreement for High-Capacity Cache Technology

From X-bit Labs: Globalfoundries, a joint-venture between Advanced Micro Devices and Advanced Technology Investment Company, on Tuesday said that it had agreed to work with T-RAM Semiconductor on Thyristor-RAM embedded memory technologies for advanced fabrication processes. The move will enable customers of Globalfoundries to enjoy the benefits of Thyristor-RAM for caches and other rapid memory blocks of their chips.

The joint development agreement is targeted at implementing T-RAM’s embedded memory technology into Globalfoundries’ manufacturing processes at the 32nm node and below. The technology can be used in bulk and SOI processes, which are both being developed by the company for advanced nodes.

“We are pleased to be jointly developing T-RAM memory for 32nm and 22nm technologies. T-RAM’s embedded memory technology shows a great deal of potential for use in low-power, high-performance dense cache applications for advanced technology nodes,” said Gregg Bartlett, senior vice president of technology and R&D at Globalfoundries.

The contract maker of chips said that the increase in density offered by T-RAM’s embedded memory has the potential to enable much larger on-chip cache memories.

Globalfoundries hopes that this technology can be used to enhance the performance and power-consumption of microprocessors and also shows promise for other applications, such as system-on-chip designs for netbooks, smartphones, and other mobile devices.

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