From EETimes: Intel Corp. (Santa Clara, Calif.) has announced the integration of a 3G HSPA radio frequency transceiver with power amplifiers on a single 65-nm die.
The chip is designed in a standard 65-nm foundry process as offered by GlobalFoundries, Taiwan Semiconductor Manufacturing Co. Ltd. and United Microelectronics Corp., said Stefan Wolff, vice president of the Intel Architecture Group, in email correspondence with EE Times.
The Smarti brand is used for all Intel mobile communications cellular RF transceiver products and was established more than 10 years ago by Infineon Technologies AG. The brand was acquired by Intel with the Infineon wireless business unit.
The SMARTi UE2p integrates power management and sensors and allows direct connection to the battery. The chip supports multiple 3G dual-band configurations for use with Intel's HSPA modem chips.
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