Samsung Claims First 40nm DRAM, GDDR5 Possible

From DailyTech: Previously, DailyTech reported on how DDR3 DRAM produced on 50nm production lines would be much cheaper and faster than those being produced on current production lines.

Elpida, Samsung, and even beleaguered Qimonda are either in the process of or planning to transition to these new geometries in order to lower costs and increase profits. DDR2 DRAM is currently selling at below the breakeven point for most DRAM manufacturers.

Samsung, the world's top DRAM producer, is announcing that it has developed a 1GB DDR2 SODIMM using 1Gb DDR2 DRAM on a 40nm process. The process size refers to the average half-pitch of a memory cell. A smaller die size means that more dies can fit on a silicon wafer, reducing production costs. Samsung expects power savings of 30 percent if lower voltages are used, made possible by the smaller size.

A smaller size also means that higher memory densities can be introduced, such as Samsung's 4Gb DDR3 chips. These can be used to produce 8GB DIMMs and SODIMMs. Samsung said it plans to apply its 40nm technology to develop a 2Gb DDR3 device for mass production by the end of 2009, lowering DDR3 prices even further.

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