Micron Shows Superfast 128 GBps DRAM Memory

From Tom's Hardware: Micron demonstrated a prototype of a possible future DRAM technology at the Hot Chips conference.

Called Hybrid Memory Cube (HMC), the technology represents a logic layer with a stack of memory chips that are vertically connected with through silicon vias (TSVs). According to Micron, the number of contacts as well as short distances enable dramatically higher data transfer rates than today's memory architecture. The prototype shown at Hot Chips was rated at 128 GBps.

In comparison, current DDR3-1600 devices deliver 12.8 GBps. Micron claims that a single HMC could deliver about 20 times the bandwidth of a DDR3 module, while it consumes substantially less energy - only 10 percent of the energy per bit that DDR3 uses. According to the manufacturer, the architecture also requires about 90 percent less space than current RDIMMs.

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