From X-bit Labs: BM’s Bulk Process Alliance – which includes Chartered Semiconductor, Globalfoundries, IBM, Infineon Technologies, Samsung Electronics and ST Microelectronics – on Thursday said that that it would start making chips using low power 28nm fabrication process with high-K metal gate (HKMG) dielectrics in the second half of 2010. “Through this collaboration, IBM and its alliance partners are helping to accelerate development of next-generation technology to achieve high-performance, energy-efficient chips at the 28nm process level, maintaining our focus on technology leadership for our clients and partners.” said Gary Patton, vice president for IBM’s semiconductor research and development center. This announcement represents an extension of existing joint development agreements, and further progression in the technology offerings of the alliance partners, building on the success of earlier joint development work in 32nm HKMG technology. A 28nm low-power technology evaluation kit was previously made available in December 2008 to early access clients, followed by release in March 2009 of an evaluation kit for open access to the general marketplace. Early risk production is anticipated in the second half of 2010. View: Article @ Source Site |